发明名称 |
Via Line Barrier and Etch Stop Structure |
摘要 |
A semiconductor device and a method for making the semiconductor device having a barrier layer in a via hole region and a barrier layer in a via line region. The barrier layer in the via line region is initially thicker than the barrier layer in the via hole region, prior to being etched during an etching process due to varying selectivity of etching rates between the via hole region and the via line region.
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申请公布号 |
US2007264817(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20060382924 |
申请日期 |
2006.05.11 |
申请人 |
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. |
发明人 |
IIJIMA TADASHI |
分类号 |
H01L29/00;H01L21/4763;H01L23/29;H01L23/48 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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