发明名称 |
UV ASSISTED THERMAL PROCESSING |
摘要 |
<p>The present invention provides methods and apparatus for performing thermal processes to a semiconductor substrate. Thermal processing chambers of the present invention comprise two different energy sources, such as an infrared radiation source and a UV radiation source. The UV radiation source and the infrared radiation source may be used alone or in combination to supply heat, activate electronic, or create active species inside the thermal processing chamber.</p> |
申请公布号 |
WO2007130909(A2) |
申请公布日期 |
2007.11.15 |
申请号 |
WO2007US67774 |
申请日期 |
2007.04.30 |
申请人 |
APPLIED MATERIALS, INC.;RANISH, JOSEPH MICHAEL;YOKOTA, YOSHITAKA |
发明人 |
RANISH, JOSEPH MICHAEL;YOKOTA, YOSHITAKA |
分类号 |
A61N5/06 |
主分类号 |
A61N5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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