| 摘要 |
<p>A manufacturing method of a semiconductor device using an immersion lithography process is provided to prevent a developing liquid from being polluted by being mixed with a top coat substance when developing a photoresist by performing the developing process with double steps to eliminate the top coat substance in advance. Photoresist layers(112) are formed on a semiconductor wafer(110). A top coat substance(114) is coated on the top portion of the photoresist. An exposure process is performed by using an immersion lithography exposure apparatus. The resultant structure is baked. As a first developing step, the top coat substance is eliminated by rotating the wafer and supplying developing liquids(30). As a second developing step, a requested pattern is obtained by supplying the developing liquids to develop the photoresist when the wafer is stopped.</p> |
