发明名称 |
ELECTRIC FIELD READING HEAD, ELECTRIC FIELD WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME |
摘要 |
An electric field information reproducing head, an electric field information recording and reproducing head, a manufacturing method thereof, and an information keeping device thereof are provided to perform a mass production on a wafer easily and to improve reliability and economic efficiency. In an electric field information reproducing head(10), a medium corresponding surface includes a semiconductor substrate(11) having a resistance area(12) and a source and drain area(13,14). The resistance area is positioned at a center portion of one end and doped with a foreign material at low concentration. The source and drain area is positioned at both sides of the resistance area and doped with the foreign material at higher concentration than the resistance area. An electric field information recording and reproducing head includes an insulation screen positioned on the resistance area, and a writing electrode positioned on the insulation screen, additionally. An information keeping device thereof includes an information keeping medium having a recording layer formed by a strong dielectric body. A manufacturing method thereof includes a step of forming the resistance area at the medium corresponding surface by doping the other foreign material whose polarity is different from the polarity of the foreign material for the semiconductor substrate.
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申请公布号 |
KR20070109776(A) |
申请公布日期 |
2007.11.15 |
申请号 |
KR20060107484 |
申请日期 |
2006.11.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, JU HWAN;KO, HYOUNG SOO;PARK, HONG SIK;KIM, YONG SU;HONG, SEUNG BUM |
分类号 |
G11B5/127;G11B5/147;G11B5/33 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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