| 摘要 |
An apparatus and a method for plasma enhanced chemical vapor deposition are provided to diffuse a reaction gas into an entire region of a process chamber by using a fan installed at a position adjacent to a gas injection unit. A susceptor(120) is installed in a process chamber in order to support a substrate(100). A gas injection unit(160) injects a reaction gas into the inside of the process chamber in order to deposit a thin film on the substrate. A fan(230) is installed in the inside of the process chamber adjacent to the gas injection unit in order to diffuse the reaction gas. The fan includes a rotary shaft and a plurality of wings which are formed in a longitudinal direction of the rotary shaft. A top part of each wing adjacent to the gas injection unit is twisted in a constant direction. A gas diffusion unit(170) diffuses the reaction gas diffused by the fan.
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