| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a nitride-based semiconductor light emitting element having high light extraction efficiency and excellent in light emission characteristic and productivity. <P>SOLUTION: The process for fabricating a nitride-based semiconductor light emitting element comprises a step for forming a semiconductor layer 104 by laminating at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer sequentially on a first substrate 101, and obtaining a lamination semiconductor having a side face consisting of an inclining surface formed by blasting the semiconductor layer; and a step for providing a second substrate on the lamination semiconductor and then stripping the first substrate from the lamination semiconductor by irradiating the interface thereof with laser light, wherein a substrate having a Vickers hardness higher than that of the semiconductor layer is employed as the first substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
