| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a film thickness of a thick film semiconductor layer for supporting a device structure made up of group III-V nitride semiconductor sufficiently thick without damaging crystallinity of the device structure. <P>SOLUTION: Each of device structure 20 in a semiconductor device is made up of group III-V nitride semiconductor and has a first semiconductor layer 11, an emission layer 12 and a second semiconductor layer 13. A relatively thick third semiconductor layer 14 of n-type gallium nitride having a thickness of approximately 100 μm and a crystal defect density higher than that of each layer 11, 12, 13 constituting the device structure 20 is bonded on the side of the second semiconductor layer 13 opposite to the emission layer 12. <P>COPYRIGHT: (C)2008,JPO&INPIT |
