| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a manufacturing method thereof that can improve light emission efficiency and lower manufacturing cost. <P>SOLUTION: In the semiconductor light emitting element, an n-type Al<SB>0.6</SB>Ga<SB>0.4</SB>As current diffusing layer 2 and n-type Al<SB>0.5</SB>In<SB>0.5</SB>P clad layer 3 are formed on an AlGaInP active layer 4, while a p-type Al<SB>0.5</SB>In<SB>0.5</SB>P clad layer 5, p-type GaInP intermediate layer 6, p-type GaP contact layer 7, and p-type GaP light transmitting semiconductor layer 8 are formed under the AlGaInP active layer 4. Carrier concentration of the p-type GaP contact layer 7 is higher than that of the p-type GaP light transmitting semiconductor layer 8. <P>COPYRIGHT: (C)2008,JPO&INPIT |
