| 摘要 |
PROBLEM TO BE SOLVED: To provide a multichannel thin-film transistor configuration for solving a conventional problem of a thin-film transistor having a threshold voltage increasing when a positive bias is continuously applied to a gate electrode. SOLUTION: The multichannel thin-film transistor configuration includes a first conductive layer, an insulating layer, a semiconductor layer, and a second conductive layer. The first conductive layer is disposed on a substrate and has a gate electrode 122. The insulating layer covers the first conductive layer. The semiconductor layer is disposed on the insulating layer provided above the gate electrode 122, and has a plurality of island-like semiconductor layers 142. The second conductive layer is disposed on the insulating layer and the semiconductor layer, and has a source electrode 152 and a drain electrode 154. Each of the island-like semiconductor layers 142 has one end electrically connected to the source electrode 152 and the other end electrically connected to the drain electrode 154. COPYRIGHT: (C)2008,JPO&INPIT
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