| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which a back gate electrode can be formed under a field effect transistor arranged on an insulator while enhancing controllability of threshold. SOLUTION: A trench 31 is formed through a second semiconductor layer 12 and a first semiconductor layer 11 to expose a semiconductor substrate 1, and a support 41 for supporting the second semiconductor layer 12 is formed in the trench 31. A trench 35 is formed for exposing the first semiconductor layer 11 from under the second semiconductor layer 12 supported by the support 41. A cavity 37 is formed between the semiconductor substrate 1 and the second semiconductor layer 12 by etching the first semiconductor layer 11 through the trench 35. An insulating film 43 is then formed on the upper and lower surfaces in the cavity 37. Thereafter, functional liquid 39 is introduced into the cavity 37 and the cavity 37 is filled with a metal layer or a semiconductor layer formed of the functional liquid 39. COPYRIGHT: (C)2008,JPO&INPIT
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