| 摘要 |
After an ONO film in which a silicon nitride film ( 22 ) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films ( 21 ), ( 23 ), a bit line diffusion layer ( 17 ) is formed in a memory cell array region ( 11 ) by an ion implantation as a resist pattern ( 16 ) taken as a mask, then lattice defects are given to the silicon nitride film ( 22 ) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.
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