发明名称 |
PROCESS FOR PRODUCING A III-N BULK CRYSTAL AND A FREE-STANDING III -N SUBSTRATE, AND III -N BULK CRYSTAL AND FREE-STANDING IH-N SUBSTRATE |
摘要 |
The invention describes a process for producing a III -N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III -N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained. |
申请公布号 |
WO2007128522(A2) |
申请公布日期 |
2007.11.15 |
申请号 |
WO2007EP03961 |
申请日期 |
2007.05.04 |
申请人 |
FREIBERGER COMPOUND MATERIALS GMBH;LEIBIGER, GUNNAR;HABEL, FRANK;EICHLER, STEFAN |
发明人 |
LEIBIGER, GUNNAR;HABEL, FRANK;EICHLER, STEFAN |
分类号 |
C30B25/16;C30B29/40 |
主分类号 |
C30B25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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