发明名称 Semiconductor device having microstructure and method of manufacturing microstructure
摘要 A semiconductor device having a microstructure and a method of manufacturing a microstructure are provided, suppressing any change of characteristics in a wafer state caused in an assembly step. Specifically, a wafer where a plurality of microstructure chips are formed and a dummy wafer are attached to each other using an adhesive layer. As to an MEMS device, a cut dummy wafer is used as a mount for a chip and the dummy wafer and a housing member are attached to each other. Thus, the dummy wafer absorbs any stress or the like applied from below when the housing member is used for packaging.
申请公布号 US2007262306(A1) 申请公布日期 2007.11.15
申请号 US20070826647 申请日期 2007.07.17
申请人 TOKYO ELECTRON LIMITED 发明人 IKEUCHI NAOKI;HASHIMOTO HIROYUKI
分类号 H01L23/58;B81C3/00 主分类号 H01L23/58
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