VACUUM PROCESSING CHAMBER SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES AND COMPONENTS OF SAME

摘要

Embodiments of the invention provide an apparatus, such as a processing chamber, suitable for etching high aspect ratio features. In other embodiments, various chamber components are disclosed that enable good processing results during high aspect ratio etching. For example, in one embodiment a processing chamber is provided that includes a chamber body having a showerhead assembly and substrate support assembly disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body. In other embodiments, at least one of a novel cathode liner, upper outer liner, lower outer liner, a substrate support assembly, a lid assembly, a showerhead assembly and a quartz ring are provided which are beneficial to plasma etching high aspect ratio features.