| 摘要 |
A method for manufacturing a nitride semiconductor laser device and a nitride semiconductor laser device are provided to prevent burrs or cut chips from being attached on a split part and to produce the laser devices with stable quality by smoothly executing a laser device handling process. In a method for manufacturing a nitride semiconductor laser device comprising a first conductive nitride semiconductor layer(11), an active layer, and a second conductive nitride semiconductor layer(13) formed on a substrate and a laminate forming a resonator, a first auxiliary groove comprises an exposed region(11a) and two protruded regions(11b) arranged at both sides of the resonator of a device region forming the laser device on the surface of the laminate and formed by exposing the first conductive nitride semiconductor layer by removing at least the second conductive nitride semiconductor layer and the active layer from the side of the second conductive nitride semiconductor layer. The exposed region is extended in the direction of the resonator of the laser device. The protruded regions are narrower than the exposed region and protruded in the direction of the resonator. A second auxiliary groove is formed in the exposed region. The side inclination angle of the second auxiliary groove from the direction of a normal for the surface of the substrate is larger than that of the first auxiliary groove. The substrate and the laminate are split by the second auxiliary groove.
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