| 摘要 |
A method for erasing a NAND flash memory device is provided to reduce test time by performing soft erase in case of erase fail in an erase verify operation, during a probe test. An erase operation of a unit of cells is performed by using a fixed voltage(S10). An erase verify operation of the unit of the cells is performed(S12). After performing a soft erase operation when the unit of the cells passes, the erase verify operation is repeated. When the unit of the cells fails during the erase verify operation, the soft erase operation is verified. When the soft erase is done, a soft erase verify operation is performed(S22). When the soft erase is not done, the soft erase verify operation is performed as many as the setting number of soft erase. When the unit of the cells fails, an error message is displayed and the erase method ends. When the unit of the cells passes, the erase operation is completed.
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