SLURRY AND METHOD FOR CHEMICAL MECHANICAL POLISHING

摘要

A chemical mechanical polishing slurry and a polishing method using the same are provided to improve thickness uniformity of a planarization target layer between the center part and the edge part of a wafer by controlling viscosity of slurry. A chemical mechanical polishing slurry includes: a slurry comprising an abrasive dispersed in deionized water; and an organic viscosity modifier which is added to adjust viscosity of the slurry to 0.5-3.2 cps. A polishing method using the polishing slurry includes the steps of: introducing a wafer in such a way that a polishing target layer of the wafer faces a polishing pad of a chemical mechanical polishing device; and supplying the polishing slurry onto the polishing pad to polish the polishing target layer.