| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to improve HCI(Hot Carrier Injection) characteristics by improving the quality of a gate oxide layer without increasing a size of a transistor. An active region and a field region are defined by using an isolation layer(102). A polysilicon layer(106) is formed in a direction crossing the active region and the field region. A dielectric layer(108) is formed on an upper surface of the polysilicon layer. An etched region of dielectric layer(110) is formed by etching a part of the dielectric layer formed on an upper surface of the field region. The etched region of dielectric layer is formed with a shape of rectangle or a shape of circle. A lateral size and a longitudinal size of the etched region of dielectric layer having the shape of rectangle or the shape of circle are equal to each other or different from each other.
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