| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a bridge phenomenon between contact plugs by forming a barrier film using a nitride layer and then forming the contact plug, and to secure an area for the contact plug for reducing cell resistance. An interlayer dielectric(120) is formed on a semiconductor substrate(100), and then a first photoresist pattern is formed at a storage electrode contact region. A trench is formed by etching the interlayer dielectric by using the first photoresist pattern as a mask. A barrier film(125) is formed by filling the trench using a nitride layer, after removing the first photoresist pattern. A second photoresist pattern exposing the contact region is formed on the entire surface of the semiconductor substrate. A storage electrode contact hole is formed by etching the interlayer dielectric. A storage electrode contact plug(135) is formed by using a polysilicon layer, after removing the second photoresist pattern.
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