| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an end structure area and a transition area, wherein the end structure area and the transition area are further shortened and a gate electrode is installed only in an essentially required area without prolonging a total gate length more than required. SOLUTION: The semiconductor device has a trench embedding area 5 where an insulator 20 is embedded in a trench 19, in a transition area 2 between an active area 1 and an end structure area 3. In the transition area 2, a p-type channel area 4 which is more shallow than the trench 19 is formed on the side of the active area 1 of the trench embedding area 5, and also a p-type bypass area 6 connected electrically to a source electrode 17 is formed on the side of the end structure area 3 of the trench embedding area 5. COPYRIGHT: (C)2008,JPO&INPIT
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