Insulated gate semiconductor device

摘要

Channel regions and gate electrodes are also disposed continuously with transistor cells below a gate pad electrode. The transistor cells are formed in a stripe pattern and allowed to contact a source electrode. In this way, the channel regions and the gate electrodes, which are positioned below the gate pad electrode, are kept at a predetermined potential. Thus, a predetermined drain-source reverse breakdown voltage can be secured without providing a p⁺ type impurity region on the entire surface below the gate pad electrode.