发明名称 SHOWER HEAD OF EQUIPMENT FOR USE IN ATOMIC LAYER DEPOSITION
摘要 A shower head of atomic layer deposition process equipment is provided to improve a shower head structure that is weak to thermal energy and prevent the reduction of an oxidation gas in conventional atomic layer deposition process equipment, and increase the yield by reducing the generation of the process defects. A shower head(100) of an atomic layer deposition process equipment comprises: an oxidation gas cooling block(110) in which an oxidation gas ejection hole(142) is formed to provide a path for injecting an oxidation gas into a reaction chamber of the equipment, and which is connected to an oxidation gas supply line(140); a buffering block(120) which has first ejection holes(122) communicated with the oxidation gas ejection hole to reduce a phenomenon that the oxidation gas cooling block is heated by heat emitted from a heating plate within the reaction chamber, and which is disposed below the oxidation gas cooling block; and a source gas block(130) in which a source gas ejection hole(152) is formed to provide a path for injecting a source gas into the reaction chamber, which has second ejection holes(132) formed therein and communicated with the first ejection holes to provide a path for injecting the oxidation gas into the reaction chamber, and which is disposed below the buffering block. The shower head further comprises a cooling water injection port(160) and a cooling water discharge port(162).
申请公布号 KR20070109384(A) 申请公布日期 2007.11.15
申请号 KR20060042261 申请日期 2006.05.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, HEE SEOK
分类号 C23C16/00 主分类号 C23C16/00
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