| 摘要 |
A method for manufacturing a semiconductor device is provided to improve EM(Electro Migration) property by filling a metal film firstly using a CVD and then filling secondly the metal film using a PVD to anneal it, and to prevent dishing of the metal film when performing CMP by forming a SOG film or a low dielectric film. A first diffusion barrier(102), an interlayer dielectric(104) and a second diffusion barrier(106) are formed on a semiconductor substrate(100). A trench having a narrow width is formed by etching the first and the second diffusion barrier and the interlayer dielectric. A barrier metal layer(108) is formed on the resultant structure. A first metal film(100) is filled firstly into the resultant structure including the trench by the CVD, and filled secondly by the PVD. The second diffusion barrier is exposed by performing CMP, after forming a SOG film or a low dielectric film on the trench.
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