| 发明名称 |
P-DOTIERTE ZINKOXIDSCHICHTEN UND HERSTELLUNGSVERFAHREN |
| 摘要 |
A p-type zinc oxide film and process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 17 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50cm 2 /Vs. |
| 申请公布号 |
AT378694(T) |
申请公布日期 |
2007.11.15 |
| 申请号 |
AT19990945010T |
申请日期 |
1999.08.02 |
| 申请人 |
THE CURATORS OF THE UNIVERSITY OF MISSOURI |
发明人 |
WHITE, HENRY;ZHU, SHEN;RYU, YUNGRYEL |
| 分类号 |
H01L29/22;C23C14/08;C23C14/28;C30B23/02;H01L21/203;H01L21/22;H01L21/225;H01L21/363;H01L21/385;H01L31/0296;H01L31/10;H01L31/18;H01L33/00;H01L33/28;H01S5/327 |
主分类号 |
H01L29/22 |
| 代理机构 |
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