| 摘要 |
PROBLEM TO BE SOLVED: To prevent an etching failure when performing vertical etching of a semiconductor layer of a capacitance sensor. SOLUTION: In the capacitance sensor 1, a fixed electrode 5 and a movable electrode 5 operated corresponding to displacement of a physical quantity by a movable mechanism formed on the semiconductor layer 2 are arranged oppositely mutually at an interval, and the physical quantity is detected based on a capacitance detected corresponding to the size of the interval between the fixed electrode 6 and the movable electrode 5. The sensor 1 includes the movable mechanism formed by performing vertical etching of the semiconductor layer 2 to which an insulating layer 20 is bonded, and a protection film 30 is formed on a facing surface of the semiconductor layer 2 facing to the insulating layer 20 or on a facing surface of the insulating layer 20 facing to the semiconductor layer 2. COPYRIGHT: (C)2008,JPO&INPIT
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