发明名称 |
Method of forming a fine pattern |
摘要 |
A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.
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申请公布号 |
US2007264598(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20060416263 |
申请日期 |
2006.05.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG CHING-YU;LIN BURN-JENG;LIN CHIN-HSIANG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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