发明名称 Method of forming a fine pattern
摘要 A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.
申请公布号 US2007264598(A1) 申请公布日期 2007.11.15
申请号 US20060416263 申请日期 2006.05.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHANG CHING-YU;LIN BURN-JENG;LIN CHIN-HSIANG
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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