| 摘要 |
A non-planar transistor and methods for fabricating the same. In certain embodiments, the transistor includes an active gate and a passive gate. The active gate may be switchably coupled to a first voltage that is configured to turn on the transistor, and the passive gate may be fixedly coupled to a second voltage different than the first voltage. In some embodiments, the difference in voltage between the first voltage and the second voltage is greater than or substantially equal to a difference in voltage between the first voltage and a substrate voltage.
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