发明名称 |
Transistors Having V-shape Source/Drain Metal Contacts |
摘要 |
A semiconductor structure and a method for forming the same. The semiconductor structure includes (a) a semiconductor layer, (b) a gate dielectric region, and (c) a gate electrode region. The gate electrode region is electrically insulated from the semiconductor layer. The semiconductor layer comprises a channel region, a first and a second source/drain regions. The channel region is disposed between the first and second source/drain regions and directly beneath and electrically insulated from the gate electrode region. The semiconductor structure further includes (d) a first and a second electrically conducting regions, and (e) a first and a second contact regions. The first electrically conducting region and the first source/drain region are in direct physical contact with each other at a first and a second common surfaces. The first and second common surfaces are not coplanar. The first contact region overlaps both the first and second common surfaces.
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申请公布号 |
US2007262396(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20060380097 |
申请日期 |
2006.04.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;YANG HAINING;LUO ZHIJIONG |
分类号 |
H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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