Electrostatic discharge-protective circuit for e.g. microprocessors, has high frequency line dimensioned, so that current path is transformed from low impedance to another impedance, which is very high with respect to system impedance

摘要

The circuit has electrostatic discharge (ESD)-units (D1, D2) switching between a signal line and one of positive and negative supply voltages. A high frequency line (L1) connected with the ESD-unit in rows is dimensioned, such that a current path is transformed over the ESD unit with a pre-determined signal high frequency. The current path is transformed from a low impedance opposite to a system impedance to another impedance, which is very high in relation to the system impedance. Independent claims are also included for the following: (1) an adjusting network for an integrated circuit that is provided with an electrostatic discharge (ESD)-protective circuit (2) a semiconductor device with an integrated circuit and an ESD-protective circuit.