Non-volatile memory device`s e.g. digital camera, memory cell, has select transistor gate of select transistor, and two memory cell transistor gates of memory cell transistors on substrate at opposite sides of select transistor

摘要

The cell has a select transistor gate of a select transistor (ST) on a substrate, where the select transistor gate has a select gate on a gate dielectric pattern. Two memory cell transistor gates of memory cell transistors (MT1, MT2) are provided on the substrate at opposite sides of the select transistor. Each memory cell transistor gates has a tunnel insulating layer pattern, a charge storage layer pattern, a blocking insulating layer pattern and a control gate. Two floating junction regions are provided between the select transistor gate and the cell transistor gates respectively. Independent claims are also included for the following: (1) a non-volatile memory system comprising a memory controller (2) a method of forming memory cell of a non-volatile memory device.