| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to form an ultra micro pattern under the resolution limit of an exposure apparatus by performing double lithography processes without performing an etch process, thereby simplifying the processes more than a conventional double patterning process. A composition including an optical permeability polymer, a photo degradation material and a solvent is prepared. A photoresist film(23) is coated at the top portion of an etched layer(22) in a semiconductor substrate(21), and a first bleaching layer(24) is formed by coating the composition. A first region of the resultant structure is exposed by using a first exposing mask, and then the first bleaching layer is removed. A second bleaching layer is formed by coating the composition on the entire structure, and a second region is exposed by using the second exposing mask. After removing the second bleaching layer, a photoresist pattern is formed by developing the photoresist. The bottom etched layer is etched by using the photoresist pattern as an etch barrier.</p> |
