| 摘要 |
A circuit and a method for controlling refresh in a semiconductor memory device are provided to perform to control the period of a refresh signal more stably in correspondence to temperature, by preventing an operation error due to an error in each component. A temperature sensor(50) generates a temperature sensing voltage by sensing temperature. A control unit(60) generates a plurality of control signals. A digital converter(70) converts the temperature sensing signal into digital codes of plural bits according to the control of the plurality of control signals. A refresh signal generator(80) generates a refresh signal with a period corresponding to the input of the digital codes of plural bits.
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