| 摘要 |
A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to decrease a dark adjacent failure of the CIS(CMOS Image Sensor) by removing small particles from the CIS. An uppermost conductive layer is formed on a portion of the substrate in a logic pad unit. A USG(Undoped Silicate Glass) protective film is formed to cover the uppermost conductive layer. A cap TEOS(Tetra Ethyl Ortho Silicate) protective film is formed on an overall surface of the USG protective film including the uppermost conductive layer. A nitride protective film is formed on the cap TEOS protective film. The substrate is sintered. A portion of the nitride protective film, the cap TEOS protective film, and the USG protective film is etched from the uppermost conductive layer on the logic pad unit, so that the uppermost conductive layer is exposed. A color filter layer and a microlens are sequentially formed on the nitride protective film on a pixel region.
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