| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photodetector (such as a near-infrared photodetector) that is integrated with a silicon substrate and has enhanced quantum efficiency. <P>SOLUTION: A method of producing a vertical sidewall on a silicon substrate (110) for an Si/SiGe photodetector comprises a process of preparing a silicon layer (110) in which a silicon surface (110) lies in parallel with an underlying silicon wafer surface. The silicon layer (110) is masked with a mask sidewall that lies in parallel with the surface of the silicon layer (110), and is etched so as to remove unmasked portions and to leave the patterned silicon layer (110) having a vertical silicon sidewall (111). After that, the mask is removed, and an SiGe-containing layer is grown on the patterned silicon layer (110) to produce a photodetector. <P>COPYRIGHT: (C)2008,JPO&INPIT |
