| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To correct a mask pattern highly precisely in consideration of an exposure margin without significantly increasing the load of proximity effect correction on the mask pattern. <P>SOLUTION: The method for correcting the mask pattern aims, to the mask pattern formed in an exposure mask to be served for pattern exposure, to impart correction to the pattern form so as to suppress influences of an optical proximity effect upon transferring the pattern onto an exposure substrate through an exposure device. The method includes: a step S2 of extracting a pattern within a range affected by the optical proximity effect; a step S3 of classifying the extracted pattern into a correction object pattern where a pattern edge is actually shifted and a reference object pattern where an edge is not shifted upon calculating correction; and a step of correcting the shape of the correction object pattern so as to finish the object pattern within an allowable edge shift amountΔPos. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
