| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and its manufacturing method capable of preventing contamination of a metal electrode formed on an ohmic layer, alleviating a deterioration of step coverage caused by a lamination at a lower portion of a gate insulating layer, and improving interface property between laminations. SOLUTION: The thin film transistor is provided with a substrate; a channel formed on the substrate; a source ohmic layer and a drain ohmic layer formed on both sides of the channel; a gate insulating layer that covers the source ohmic layer, the drain ohmic layer, and the channel; a gate arranged on the gate insulating layer; an ILD layer that covers the gate, a source electrode, and a drain electrode which contact the source ohmic layer, and the drain ohmic layer respectively through a contact hole formed in the ILD layer, and the gate insulating layer; and a passivation layer that covers the source electrode and the drain electrode. COPYRIGHT: (C)2008,JPO&INPIT |
