| 摘要 |
A gas separative type showerhead and a pulsed CVD(Chemical Vapor Deposition) apparatus using the same are provided to shorten a purge time by forming a first and second precursors having additional paths. A gas supply source(100) is positioned at an outside of a reaction chamber(1). A first precursor supply source(11) for supplying a first precursor, a second precursor supply source(12) for supplying a second precursor, a purge gas supply source for supplying a purge gas, and a plurality of valves for controlling opening and shutting states of gases. A gas separative type showerhead(200) includes a gas supply module for supplying respectively the first and second precursors, a gas distribution module for distributing the first and second precursors, and a gas injection module having an internal insulator and an internal mixing injection hole. The power is applied to the gas distribution module in order to inject the first and second precursors into the inside of the reaction chamber. An exhaust unit(300) includes an exhaust pump in order to exhaust residual gases to the outside of the reaction chamber.
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