| 摘要 |
An image sensor with an MOS structure including a gate electrode to transmit light is provided to enhance a dynamic range of the image sensor by increasing a measurable light intensity range using a transmissive gate electrode. An image sensor includes a photodiode. A transmissive conductive layer(41) and a dielectric layer(44) are arranged on a substrate of the photodiode adjacent to a diffusion region(40) of the photodiode. A constant gate voltage is applied to the conductive layer. The photodiode is a pn-junction diode. Alternatively, the photodiode is a pinned diode. The transmissive conductive layer is made of a transparent or semi-transparent conductive material. The conductive layer and the dielectric layer form a MOS(Metal Oxide Semiconductor) capacitor structure with the substrate of the photodiode. The image sensor includes plural MOS capacitor structures.
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