| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semi conductor device wherein a light receiving element capable of its high-speed and wide-band operations, a CMOS element, and a bipolar transistor element having its double polysilicon structure are formed on a chip. <P>SOLUTION: In the manufacturing method of the semiconductor device, the implantations of the same conductivity-type ions are performed. Consequently, the formations of the same conductivity-type diffusion layers to be in two or more regions are performed at the same time. The regions are selected from the group of a light receiving element region 1a, a CMOS element region 1b, and a bipolar transistor element region 1c which are formed in a semiconductor substrate 1 or in an epitaxial layer 7 present on the substrate 1. In Fig. 1, these diffusion layers are defined as n-type diffusion layers 4b, 4c, an anode diffusion layer 8a of a p-type diffusion layer, a p-well diffusion layer 8b and a p-well collector diffusion layer 8c, a cathode diffusion layer 11a and a collector-contact diffusion layer 11c of n-type diffusion layers, source/drain diffusion layers 17b and a base Poly-Si diffusion layer 17c of n-type diffusion layers, and source/drain diffusion layers 19b and a base Poly-Si diffusion layer 19c of p-type diffusion layers. <P>COPYRIGHT: (C)2008,JPO&INPIT |
