| 摘要 |
A method of manufacturing semiconductor devices includes forming a trench in a predetermined region of a substrate. A first insulating layer and a second insulating layer are formed on a entire surface so that the trench is gap-filled. The first and second insulating layers are polished until a top surface of the substrate is exposed. A wet etch process of a low selectivity is performed, so that a portion of the first insulating layer remains on sides of the trench while stripping the second insulating layer. A third insulating layer is formed on the entire surface, so that the trench is gap-filled, thereby forming an isolation structure.
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