SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHOD

摘要

A semiconductor device and method of formation wherein a disjointed termination layer (102) is formed around a Schottky metal region (110). A SiC substrate (104) is provided, on top of which a SiC blocking layer 108 is disposed. The disjointed termination layer (102) is formed above the SiC blocking layer (108). The termination is preferably an epitaxial SiC layer. The Schottky metal region (110) is formed on the blocking layer (108), preferably on the C-face of the blocking layer.