MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING IMMERSION LITHOGRAPHY PROCESS

摘要

A method for manufacturing a semiconductor device using an immersion lithography process is provided to prevent a photoresist pattern defect caused by an water mark by performing a simple process to remove the photoresist and the water mark simultaneously by using a photoresist remover. After exposing, a photoresist is treated by using a photoresist remover. A photoresist is formed on a semiconductor substrate(110). An exposing process is performed by using an immersion lithography exposure apparatus. The resultant structure is baked, after exposing. The photoresist with a predetermined thickness is removed non-selectively by spraying a photoresist remover. A requested pattern is completed by developing the resultant structure and removing the photoresist selectively.