ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (AI, IN, GA)N LAYERS
摘要
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
申请公布号
WO2006113443(A3)
申请公布日期
2007.11.15
申请号
WO2006US14084
申请日期
2006.04.13
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY;SPECK, JAMES S.;HASKELL, BENJAMIN A;PATTISON, P. MORGAN;BAKER, TROY J
发明人
SPECK, JAMES S.;HASKELL, BENJAMIN A;PATTISON, P. MORGAN;BAKER, TROY J