| 摘要 |
PROBLEM TO BE SOLVED: To provide an interconnection structure having a barrier material coverage range in which the barrier material thickness of the sidewall of the structure is larger than that of the bottom portion of the structure, and to provide the method of manufacturing such interconnection structure. SOLUTION: There are provided an interconnection structure having a barrier material coverage range in which the barrier material thickness of the sidewall of the structure is larger than that of the bottom portion of the structure, and the method of manufacturing such interconnection structure. The interconnection structure of the invention has improved technical extensibility for semiconductor society compared with the interconnection structure of the prior art in which a barrier material is formed by a conventional PVD process, conventional ionized plasma deposition, CVD, or ALD. According to the invention, there is provided the interconnection structure having the barrier material thickness (w<SB>t</SB>) of the sidewall of the structure larger than the barrier material thickness (h<SB>t</SB>) of the bottom portion of the structure. That is, in the interconnection structure of the invention, w<SB>t</SB>/h<SB>t</SB>fraction is equal to or more than 100%. COPYRIGHT: (C)2008,JPO&INPIT
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