| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a channel part having a satisfactory carrier mobility, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a protruding first conductive type first semiconductor layer 13 formed on an insulating layer 12 of a substrate 14; a gate electrode 17 formed on a first side surface of the layer 13 and a second side surface facing to the first side surface through gate insulating films 16a, 16b; a source region 19 having second conductive type second semiconductor layers 18a, 18b different from the layer 13 formed from the part on the layer 12 of the substrate 14 on the third side surface of the layer 13, and a drain region 20 having the second conductive type second semiconductor layers 18c, 18d different from the layer 13 formed from the part on the layer 12 of the substrate 14 on the fourth side surface facing to the third side surface of the layer 13. COPYRIGHT: (C)2008,JPO&INPIT
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