| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method by which an interlayer insulation film is etched at high selection ratio. SOLUTION: An etching gas made of a fluorocarbon gas and a noble gas is led into a vacuum chamber, and the inside of the vacuum chamber is set at a specified pressure. Then plasma is generated to etch an interlayer insulation film formed on a processing substrate. In this dry etching method, voltage is applied to a silicon plate provided in the vacuum chamber from a high-frequency power supply through a capacitor, so as to allow silicon atoms and fluorine atoms on the silicon plate to be reacted with each other and to apply etching while consuming the fluorine atoms in the vacuum chamber. COPYRIGHT: (C)2008,JPO&INPIT
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