| 摘要 |
PROBLEM TO BE SOLVED: To provide a NOR flash memory and a manufacturing method thereof. SOLUTION: A semiconductor memory array and a manufacturing method thereof are provided. The semiconductor memory array comprises multiple bit line diffusion regions 21 formed in a substrate 19, and a pair of memory cells formed between the bit line diffusion regions 21. The pair of memory cells has floating gates 11, an erase gate 17 provided between the floating gates 11, a source line diffusion region 13 provided in the substrate below the erase gate 17, and at least one additional conductor 16 capacitively coupled to the floating gates 11. In some disclosed embodiments, conductors each of which is adjacent to a bit line diffusion region 21 are word lines 14, and an additional conductor is composed of a pair of coupled gates 16 each of which is coupled to its corresponding floating gate 11, or is composed of a single-coupled gate 16 which is coupled to both floating gates 11. In another embodiment, conductors each of which is adjacent to a bit line diffusion region 21 are program lines, and third conductors are word lines 14 extending in a direction perpendicular to the program lines and the diffusion regions. COPYRIGHT: (C)2008,JPO&INPIT |
