| 摘要 |
A plurality of small diameter, closely spaced openings are formed in the back of a semiconductor wafer and are filled with copper plugs in areas of the wafer where the effect of thinning is desired. The openings may be holes of any desired cross-section with a width or diameter of 3 to 5 mum and a center-to-center spacing of about 50 mum. The posts can have a depth of 180 mum or greater in a wafer having a thickness of 200 mum or greater. The wafer can be silicon, silicon carbide, gallium nitride, or any substrate used for semiconductor device fabrication.
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