发明名称 Internal voltage generating circuit and semiconductor integrated circuit device
摘要 A voltage for reference at a voltage level higher than a target value is produced from a constant current provided from a constant current generating circuit, and is subjected to resistance division by a resistance division circuit to produce a reference voltage at the target level, and then a final reference voltage is produced by a voltage follower. An internal voltage generating circuit thus provided can generate the reference voltage having the desired voltage level with high accuracy as well as an internal voltage based on the reference voltage by controlling temperature characteristic even with a low power supply voltage.
申请公布号 US2007262812(A1) 申请公布日期 2007.11.15
申请号 US20070826164 申请日期 2007.07.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 GYOHTEN TAKAYUKI;MORISHITA FUKASHI
分类号 G05F3/02;H01L27/04;G05F1/10;G05F3/24;G11C11/407;H01L21/822 主分类号 G05F3/02
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