| 发明名称 |
Formation and applications of nitrogen-free silicon carbide in semiconductor manufacturing |
| 摘要 |
A method for manufacturing an integrated circuit is provided. In one example, the method includes forming a substantially nitrogen-free silicon carbide layer over a substrate using a methyl silicate gas.
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| 申请公布号 |
US2007264843(A1) |
申请公布日期 |
2007.11.15 |
| 申请号 |
US20060430623 |
申请日期 |
2006.05.09 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LI LIH-PING;LU YUNG-CHENG;BAO TIEN-I.;JANG SYUN-MING;CHEN YING-TSUNG |
| 分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
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